Optics Express · 2020 · 13 citations · 37 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsOptical MaterialsThin FilmsNanostructured Electronic MaterialsQuantum DotsSemiconductor Device MaterialsSemiconductor NanomaterialsSilicon MaterialsSilicon PhotonicsElectroluminescenceHydrogenationNanocrystalsNanostructured SiliconOptical GainOptical Gain MaterialsQuantum Yield EnhancementSilicon Nanocrystals
High-density Si nanocrystal thin film composed of Si nanocrystals and SiO 2 , or Si-NCs:SiO 2 , was prepared by annealing hydrogen silsesquioxane (HSQ) in a hydrogen and nitrogen (H 2 :N 2 =5%:95%) atmosphere at 1100°C. Conventional normal-pressure (1-bar) hydrogenation failed to enhance the light emission of the Si-NCs:SiO 2 sample made from HSQ. High-pressure hydrogenation was then applied to the sample in a 30-bar hydrogen atmosphere for this purpose. The light emission of Si-NCs increased steadily with increasing hydrogenation time. The photoluminescence (PL) intensity, the PL quantum yield, the maximal electroluminescence intensity, and the optical gain were increased by 90%, 114%, 193% and 77%, respectively, after 10-day high-pressure hydrogenation, with the PL quantum yield as high as 59%, under the current experimental condition.
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Optical gain in silicon nanocrystals
Lorenzo Pavesi, Luca Dal Negro, Cláudio Mazzoleni et al. · Nature · 2000 · 2.3K citations
Classification and control of the origin of photoluminescence from Si nanocrystals
S. Godefroo, M. Hayne, M. Jivanescu et al. · Nature Nanotechnology · 2008 · 514 citations · Full text
Colin M. Hessel, Eric J. Henderson, Jonathan G. C. Veinot · Chemistry of Materials · 2006 · 393 citations
Natural Sciences, Materials Engineering, Materials Science +16