Effect of High Pressure on the Dielectric Properties of SrMoO₄

Abstract

In situ impedance measurement and first-principles calculations have been performed to investigate the effect of high pressure (up to 35.5 GPa) on the dielectric properties of SrMoO4. It is found that the carrier transport process is dominated by the grains, and the variation in resistance under compression is related to the change in activation energy. The relative permittivity of the tetragonal phase of SrMoO4 is stable below 7.0 GPa and has stable electrical storage capacity as well. However, the electron localization around O atoms in the monoclinic phase is enhanced with the increase in pressure, resulting in a decreased relative permittivity. A typical dielectric loss by electronic conduction of SrMoO4 is also presented. After unloading pressure, the dielectric loss of the low-frequency region is significantly reduced. Besides, the dielectric performance of SrMoO4 is effectively optimized by pressure. This study will provide a theoretical and experimental basis for the design and modification of other related ABO4-type materials for dielectric devices.