High-Performance Strain Sensors Based on Vertically Aligned Piezoelectric Zinc Oxide Nanowire Array/Graphene Nanohybrids

Abstract

A nanohybrid piezoelectric strain sensor was fabricated by growing vertically aligned (0001)-oriented crystalline zinc oxide nanowires directly on graphene (ZnO-VANWs/Gr) using a facile seedless hydrothermal process. Under mechanical strains, the induced piezoelectric effect on the ZnO-VANWs transduces to a piezoelectric gating effect at the ZnO-VANWs/Gr interface, resulting in a modulation of the conductivity of the Gr channel through electrostatic doping. The vertical alignment of the (0001)-oriented ZnO-VANWs on Gr is ideal to achieving high strain sensitivity, and a low-defect ZnO-VANWs/Gr interface obtained in the seedless hydrothermal process is key to realizing high sensitivity and fast response. Indeed, a high sensitivity up to 3.15 × 10–2 kPa–1 was obtained on the ZnO-VANWs/Gr strain sensors at lower pressures of 1.1 × 10–6–11 Torr, together with a fast response time of ∼0.10 s. In particular, these results represent enhancement factors of ∼7 and 8, respectively, as compared to strain sensors of a similar structure, except having a polycrystalline ZnO seed layer on Gr for the growth of ZnO-VANWs. Therefore, our result illustrates the critical importance of the low-defect interface of the ZnO-VANWs with Gr formed in the seedless ZnO-VANW growth for realizing an optimal electrostatic gating of Gr. In addition, the ZnO-VANWs/Gr nanohybrids can be readily scaled up using the seedless hydrothermal process for commercial applications in optoelectronics and sensors.