Frequency and temperature dependence of dielectric properties and capacitance–voltage in GO/TiO2/n-Si MOS device - Concepedia

Concepedia

Publication | Closed Access

Frequency and temperature dependence of dielectric properties and capacitance–voltage in GO/TiO2/n-Si MOS device

24

Citations

50

References

2020

Year

A. Ashery, S. A. Gad, H. Shaban

Applied Physics A

Materials ScienceDielectric PropertiesElectrical EngineeringSemiconductor TechnologyEngineeringOxide ElectronicsOxide SemiconductorsApplied PhysicsTemperature DependenceSemiconductor MaterialSilicon On InsulatorSemiconductor DeviceGo/tio2/n-si Mos Device

References

	Year	Citations

Page 1