2D/2D heterojunction of g–C ₃ N ₄ /SnS ₂ : room-temperature sensing material for ultrasensitive and rapid-recoverable NO ₂ detection

Abstract

Heterojunction engineering plays an indispensable role in improving gas-sensing performance. However, rational heterojunction engineering to achieve room-temperature NO₂sensing with both high response and rapid recovery is still a challenge. Herein, a 2D/2D heterojunction of g-C₃N₄/SnS₂is designed to improve the sensing performance of SnS₂and used for ultrasensitive and rapid-recoverable NO₂detection at room temperature. The pristine SnS₂fails to work at room temperature because of its high resistivity and weak adsorption to NO₂. After combination with g-C₃N₄nanosheets, the g-C₃N₄/SnS₂-based sensor exhibits an extremely high response (503%) and short recovery time (166 s) towards 1 ppm NO₂at room temperature. The improved sensing performance is primarily attributed to the increased adsorption sites and enhanced charge transfer induced by the 2D/2D heterojunctions with large interface contact area. This achievement of g-C₃N₄/SnS₂2D/2D heterostructures demonstrates a promising pathway for the design of sensitive gas-sensing material based on a 2D/2D heterojunction strategy.