Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.3K citations

Semiconductors, Electrical Engineering, Engineering +14

Electron-Hole Recombination in Germanium

R. N. Hall · Physical Review · 1952 · 2.7K citations

Atomic Physics, Electron Spectroscopy, Physics +1

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Improved quantitative description of Auger recombination in crystalline silicon

Armin Richter, Stefan W. Glunz, Florian Werner et al. · Physical Review B · 2012 · 839 citations · Full text

Electrical Engineering, Crystalline Silicon, Engineering +12

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

G. Dingemans, W. M. M. Kessels · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 771 citations · Full text

Aluminium Nitride, Ultrathin Al2o3 Films, Engineering +21