Developing AIMD Models Using Orthogonal Pathways for MRI Safety Assessment

Abstract

In this article, a method for active implantable medical devices (AIMD) model development is presented. Based on the transmission line model, the AIMD model can be developed semianalytically using a few direct measurements inside the American Society for Testing and Materials (ASTM) phantom. Folded orthogonal pathways based on the Hadamard matrix are used to make the problem of the AIMD model development to be well-conditioned. Both induced voltage and heating models for the example AIMDs were developed to demonstrate the effectiveness of this method.