Influence of defect density and layer thickness of absorption layer on the performance of tin based perovskite solar cell

Abstract

Abstract The tremendous progress exhibited by Perovskite solar cells (PSCs) within the decade has made PSCs the fastest growing PV cell to date. The PSCs has exhibited increment in power conversion efficiency (PCE from 3.2% to 25.2% within a decade. In PSCs, usually MAPbX 3 (X being Cl, Br and I) layer is used as an absorber layer. The incorporation of toxic Lead (Pb) is a matter of concern by some of the researchers. In order to deal with this Tin (Sn) is being used as an alternative of Pb. However, the performance of Sn based PSC still lags behind Pb based PSC. In this work, we demonstrate an efficient Sn based PSC with J Sc of 32.6398 mA/cm 2 , V oc of 0.8946V, FF of 80% and PCE of 23.4%. The results exhibits the potential of Sn based PSCs which is not only efficient but also is environmental friendly. We study the impact of defect density and layer thickness of absorber layer over the performance of Sn based PSC. An analysis on the effect of doping in Electron Transport Layer (ETL) and Hole Transport Layer (HTL) over the performance of Sn based PSC is also conducted.