Solution Processed Organic Transistors on Polymeric Gate Dielectric with Mobility Exceeding 15 cm² V⁻¹ s⁻¹

Abstract

Herein, 6,6′ bis (trans‐4‐pentylcyclohexyl)‐dinaphtho[2,1‐ b :2′,1′‐ f ]thieno[3,2‐ b ]thiophene (5H‐21DNTT)—a solution‐processable derivative of DNTT—is characterized and studied for its potential as a crystalline solution‐processed organic semiconductor to achieve high mobility and stable organic thin‐film transistor (OTFT) operation. The performance of a bottom‐gate, bottom‐contact OTFT with a 5H‐21DNTT semiconductor is analyzed with different polymeric organic gate dielectrics via various solution‐processed techniques. In comparison to other polymeric gate dielectrics, Parylene C exhibited a superior performance for 5H‐21DNTT OTFT devices, and the OTFT devices show a remarkable average mobility of 10.9 cm 2 V −1 s −1 , as well as a maximum mobility exceeding 15 cm 2 V −1 s −1 , with a 100% reliability factor.