49.35 MHz GBW and 33.43 MHz GBW amplifiers in flexible a‐IGZO TFT technology

Abstract

The authors present the implementation of two amplifiers in a commercial flexible amorphous Indium Gallium Zinc Oxide (a‐IGZO) thin‐film transistor (TFT) technology: a Cherry Hooper (CH) amplifier and a 4‐stage common source amplifier. The CH amplifier is designed as a pre‐amplifier for wireless receivers. It is optimised for a high gain‐bandwidth product (GBW). From a supply voltage of V it provides 19.4 dB gain and has a ‐bandwidth of 5.3 MHz, while consuming 0.2 mW. It has a GBW of 49.35 MHz, which is more than a factor two better than previously reported a‐IGZO TFT amplifiers. The 4‐stage common source amplifier is designed as output buffer, has a very wide range of operating conditions and strong robustness against manufacturing tolerances. From a supply voltage of V it provides 28.9 dB gain, has a ‐bandwidth of 1.2 MHz, and a GBW product of 33.43 MHz, while consuming 14.2 mW. Both circuits can operate from a supply voltage between 2.5 and 10 V.