Annealing temperature induced improved crystallinity of YSZ thin film

Abstract

Abstract Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400 °C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films’ surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500 °C divulged less oriented structure because of dislocation.