Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts*

Abstract

The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current–voltage (I–V) measurements. A non-linear fitting method was used to extract the contact parameters from the I–V characteristic curves. Experimental results indicate that high quality Schottky contact with a barrier height and ideality factor of 0.86±0.02 eV and 1.19±0.02 eV, respectively, can be obtained under 5 min annealing at 600°C in N2 ambience.