Publication | Open Access

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNarrower BarrierApplied PhysicsAluminum Gallium NitrideGan Power DeviceWider WellPhotoelectric PropertiesOptoelectronicsCompound Semiconductor