Publication | Closed Access
Interface and polarization effects induced Schottky-barrier-free contacts in two-dimensional MXene/GaN heterojunctions
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Citations
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References
2020
Year
Wide-bandgap SemiconductorEngineeringPhysicsApplied PhysicsQuantum MaterialsPolarization EffectsSchottky-barrier-free ContactsGan Power DeviceMultilayer HeterostructuresOhmic ContactsTwo-dimensional Mxene/gan Heterojunctions
Interface and polarization effects induce the transition from Schottky to Ohmic contacts in two-dimensional MXene/GaN heterojunctions.
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