Impact of Interfacial SiO₂ on Dual Ion Beam Sputtered Y₂O₃-Based Memristive System

Abstract

In this article, the effect of the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer is demonstrated on dual ion beam sputtered yttria-based memristive devices for the first time. It is found that the effect of thickening of SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer is extremely detrimental for resistive switching (RS) parameters such as endurance and uniformity of current-voltage characteristics. SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interfacial layer causes the growth of nano stalagmite in the yttria layer. This interfacial layer is also responsible for the origin of pseudo bipolarity in RS characteristics and early failure of the device during endurance testing. The thickness of the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer has a positive correlation with deposition temperature and oxygen partial pressure. It is found that the deposition temperature of 300°C and a mixture of Ar:O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with a ratio of 2:3 shows the best RS characteristics.