Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

Abstract

We report the successful fabrication of noncollinear antiferromagnetic <i>D</i>0₁₉ Mn₃Ge thin films on insulating oxide substrates. The anomalous Hall effect and the large parallel negative magnetoresistance that is robust up to 53 T are observed in the thin films, which may provide evidence for the recent theoretical prediction of the existence of Weyl fermions in antiferromagnetic Mn₃Ge. More importantly, we integrate the Mn₃Ge thin films onto ferroelectric PMN-PT substrates and manipulate the longitudinal resistance reversibly by electric fields at room temperature, demonstrating the anisotropic magnetoresistance effect in noncollinear antiferromagnets, which thus illustrates the potential of antiferromagnetic Mn₃Ge for information storage applications.