Controlled synthesis of GaSe microbelts for high-gain photodetectors induced by the electron trapping effect

Abstract

A GaSe microbelt-based photodetector has been realized with a high responsivity of ∼3866 A W⁻¹ and a photoconductive gain of up to ∼1.06 × 10⁴, which are attributed to the built-in electric field between the GaSe microbelt and the surface GaO_x layer.