Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device - Concepedia

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Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device

28

Citations

63

References

2020

Year

A. Ashery, H. Shaban, S. A. Gad, B. A. Mansour

Materials Science in Semiconductor Processing

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsCapacitance- Voltage CharacteristicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSemiconductor DeviceGo/tio2/n-si Mos Device

References

	Year	Citations

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