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Exploration of the intrinsic factors limiting the photocurrent density in ferroelectric BiFeO<sub>3</sub> thin film
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Citations
65
References
2020
Year
Materials ScienceMultiferroicsEngineeringSevere Charge RecombinationPhysicsLimiting FactorOxide ElectronicsFerroelectric ApplicationApplied PhysicsCondensed Matter PhysicsFerroelectric MaterialsIntrinsic FactorsLow Photocurrent DensityPhotoelectric MeasurementThin FilmsPhotocurrent DensityMagnetoelectric Materials
The limiting factor for low photocurrent density of polarization switchable ferroelectric BiFeO<sub>3</sub> film is due to severe charge recombination at the interfaces of the domain walls rather than recombination inside the domains.
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