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Performance enhancement of AlGaN-based deep ultraviolet light-emitting diodes by using stepped and super-lattice n-type confinement layer

Aluminium NitridePerformance EnhancementElectrical EngineeringEngineeringSolid-state LightingNanoelectronicsApplied PhysicsAluminum Gallium NitrideCategoryiii-v SemiconductorOptoelectronics