Some properties of AgAlTe_{2}, AgGaTe_{2}, and AgInTe_{2}

Abstract

The valence-band structure and the semiconducting properties of the $\mathrm{Ag}X{\mathrm{Te}}_{2}$ ($X=\mathrm{A}\mathrm{l},\phantom{\rule{0ex}{0ex}}\mathrm{G}\mathrm{a},\phantom{\rule{0ex}{0ex}}\mathrm{I}\mathrm{n}$) compounds have been studied. At 77 \ifmmode^\circ\else\textdegree\fi{}K, AgAl${\mathrm{Te}}_{2}$ and AgIn${\mathrm{Te}}_{2}$ have direct energy gaps located at 2.35 eV and 1.04 eV, respectively. AgGa${\mathrm{Te}}_{2}$ has a direct energy gap at 1.36 eV, which is probably the lowest energy gap. All three compounds can be made usefully $p$ type, but only AgIn${\mathrm{Te}}_{2}$ has been made $n$ type.