Oxygen incorporated solution-processed high-<i>κ</i> La<sub>2</sub>O<sub>3</sub> dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films - Concepedia

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Oxygen incorporated solution-processed high-<i>κ</i> La<sub>2</sub>O<sub>3</sub> dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

11

Citations

47

References

2020

Year

Longsen Yan, Waner He, Xiaoci Liang, Chuan Liu, Xihong Lu

Journal of Materials Chemistry C

Materials ScienceChemical EngineeringMaterial AnalysisEngineeringOxide ElectronicsApplied PhysicsTime-dependent Dielectric BreakdownHigh Breakdown FieldLow LeakageLarge-area UniformityMicroelectronicsElectrochemistry

Abstract

Oxygen incorporated solution-processed high-<italic>κ</italic> La<sub>2</sub>O<sub>3</sub> dielectrics exhibit large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films.

References

	Year	Citations

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