ACS Applied Materials & Interfaces · 2020 · 11 citations · 28 references
Heterostructures composed of superconductor and ferroelectrics (SC/FE) are very important for manipulating the superconducting property and applications. However, growth of high-quality superconducting iron chalcogenide films is challenging because of their volatility and FE substrate with rough surface and large lattice mismatch. Here, we report a two-step growth approach to get high-quality FeSe<sub>0.5</sub>Te<sub>0.5</sub> (FST) films on FE Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.7</sub>Ti<sub>0.3</sub>O<sub>3</sub> with large lattice mismatch, which show superconductivity at only around 10 nm. Through a systematic study of structural and electric transport properties of samples with different thicknesses, a mechanism to grow high-quality FST is discovered. Moreover, electric-field-induced remarkable change of <i>T</i><sub>c</sub> (superconducting transition temperature) is demonstrated in a 20 nm FST film. This work paves the way to grow high-quality films which contain volatile element and have large lattice mismatch with the substrate. It is also helpful for manipulating the superconducting property in SC/FE heterostructures.
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Superconductivity in the PbO-type structure α-FeSe
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