Memristor with a ferroelectric HfO ₂ layer: in which case it is a ferroelectric tunnel junction

Abstract

New interest in the implementation of ferroelectric tunnel junctions has emerged following the discovery of ferroelectric properties in HfO₂ films, which are fully compatible with silicon microelectronics technology. The coercive electric field to switch polarization direction in ferroelectric HfO₂ is relatively high compared to classical perovskite materials, and thus it can cause the migration of non-ferroelectric charges in HfO₂, namely charged oxygen vacancies. The charge redistribution would cause the change of the tunnel barrier shape and following change of the electroresistance effect. In the case of ambiguous ferroelectric properties of HfO₂ ultrathin films, this oxygen-driven resistive switching effect can mimic the tunnel electroresistance effect. Here, we demonstrate two separate resistive switching regimes, depending on the applied voltage, in the same memristor device employing a ferroelectric Hf_0.5Zr_0.5O₂ (4.5 nm) layer. The first regime originates from the polarization reversal, whereas the second one is attributed to the accumulation/depletion of the oxygen vacancies at the electrode interface. The modulation of the tunnel barrier causes the enhancement of R _OFF/R _ON ratio in ∼20 times compared to the tunnel electroresistance effect. The developed device was used to formulate the criteria for unambiguous discrimination between the ferroelectric-and non-ferroelectric resistive switching effects in HfO₂-based ferroelectric tunnel junctions.