New Transparent Conductive Oxides with YbFe₂O₄ Structure

Abstract

InGaMgO 4 and InGaZnO 4 crystals with the YbFe 2 O 4 layered structure have been found to be transparent conductive oxides. The band gaps of these crystals were wider than that of In 2 O 3 . Conductivity was induced by doping with electrons through introduction of oxygen vacancies. Mobility, carrier density and conductivity of sintered bodies of InGaMgO 4 were 2 cm 2 /V·s, 1×10 18 /cm 3 and 0.5 S/cm, respectively. Those of InGaZnO 4 were 20 cm 2 /V·s, 4×10 19 /cm 3 and 120 S/cm. A promising method to improve the conductivity to a value sufficient for practical use is discussed.