IEEE Transactions on Circuits & Systems II Express Briefs · 2020 · 21 citations · 12 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Passive ComponentsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsBeam Steering In Millimeter-wave SystemsMicrowave Phase Shifter DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsPhase ShiftersTunable Microwave Circuits
This brief presents a dual-band tunable concurrent passive phase shifter monolithic microwave integrated circuit utilizing a two-stage dual-branch phase tuning network topology. The designed phase shifter with two independent phase tuning bands operates at 5.9 GHz and 16 GHz. The dual-band phase shifter is fabricated in a 0.25 μm GaAs process and occupies a small chip area of 0.98 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (including pads). Measurement results show that transmission phases in the two frequency bands can be tuned concurrently. Phase tuning range is greater than 105° in either band. Insertion losses of less than 2.8 dB and 3.5 dB are exhibited in 5.8~6 GHz and 15.8~16.2 GHz, respectively. And amplitude imbalances within the whole phase tuning range in 5.8~6 GHz and 15.8~16.2 GHz are less than 1.1 dB and 1.3 dB, respectively. The return losses are greater than 10 dB in both frequency bands. The phase shifter is employed in a four-element dual-band phased array network. The phased array is able to independently tilt its main beam toward -20° ~ +20° in either band.
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