Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems

Abstract

Despite extensive investigations of a wide variety of artificial synapse devices aimed at realizing a neuromorphic hardware system, the identification of a physical parameter that modulates synaptic plasticity is still required. In this context, a novel two-dimensional architecture consisting of a NbSe₂/WSe₂/Nb₂O₅ heterostructure placed on an SiO₂/p+ Si substrate was designed to overcome the limitations of the conventional silicon-based complementary metal-oxide semiconductor technology. NbSe₂, WSe₂, and Nb₂O₅ were used as the metal electrode, active channel, and conductance-modulating layer, respectively. Interestingly, it was found that the post-synaptic current was successfully modulated by the thickness of the interlayer Nb₂O₅, with a thicker interlayer inducing a higher synapse spike current and a stronger interaction in the sequential pulse mode. Introduction of the Nb₂O₅ interlayer can facilitate the realization of reliable and controllable synaptic devices for brain-inspired integrated neuromorphic systems.