Publication | Open Access
Hot carrier relaxation in Cs<sub>2</sub>TiI<sub>y</sub>Br<sub>6−y</sub> (<i>y</i> = 0, 2 and 6) by a time-domain <i>ab initio</i> study
12
Citations
48
References
2020
Year
Cs<sub>2</sub>TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> is a potential light absorption material for all-inorganic lead free perovskite solar cells due to its suitable and tunable bandgap, high optical absorption coefficient and high environmental stability. However, solar cells fabricated based on Cs<sub>2</sub>TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> do not perform well, and the reasons for their low efficiency are still unclear. Herein, hot carrier relaxation processes in Cs<sub>2</sub>TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> (<i>y</i> = 0, 2 and 6) were investigated by a time-domain density functional theory combined with the non-adiabatic molecular dynamics method. It was found that the relaxation time of the hot carriers in Cs<sub>2</sub>TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> ranges from 2-3 ps, which indicates that the hot carriers within 10 nm from the Cs<sub>2</sub>TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> /TiO<sub>2</sub> interface can be effectively extracted before their energy is lost completely. The carrier-phonon non-adiabatic coupling (NAC) analyses demonstrate that the longer hot electron relaxation time in Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub> compared with that in Cs<sub>2</sub>TiBr<sub>6</sub> and Cs<sub>2</sub>TiI<sub>6</sub> originates from its weaker NAC strength. Furthermore, the electron-phonon interaction analyses indicate that the relaxation of hot electrons mainly comes from the coupling between the electrons distributed on the Ti-X bonds and the Ti-X vibrations, and that of hot holes can be attributed to the coupling between the electrons distributed on the X atoms and the distortions of [TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> ]<sup>2-</sup>. The simulation results indicate that Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub> should be better than Cs<sub>2</sub>TiBr<sub>6</sub> and Cs<sub>2</sub>TiI<sub>6</sub> to act as a light absorption layer based on the hot carrier energy loss, and the hot electron relaxation time in Cs<sub>2</sub>TiI <sub><i>y</i></sub> Br<sub>6-<i>y</i></sub> can be adjusted by tuning the proportion of the I element.
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