Publication | Closed Access
Interface modification of sputtered NiO<sub>x</sub> as the hole-transporting layer for efficient inverted planar perovskite solar cells
92
Citations
51
References
2019
Year
Optical MaterialsEngineeringHalide PerovskitesOptoelectronic DevicesThin Film Process TechnologyPerovskite Solar CellsPhotovoltaicsOptical PropertiesSolar Cell StructuresThin Film ProcessingMaterials ScienceOxide HeterostructuresPhysicsOptoelectronic PropertiesOxide ElectronicsOptoelectronic MaterialsHole-transporting LayerPerovskite MaterialsSemiconductor MaterialKcl TreatmentsBetter Device PerformancePerovskite Solar CellApplied PhysicsInterface ModificationThin FilmsSolar CellsOptoelectronicsSolar Cell Materials
An appropriately combined triple interface modification, <italic>i.e.</italic>, post-annealing, O<sub>2</sub>-plasma, and KCl treatments, is employed to ameliorate the optoelectronic properties of sputtered NiO<sub>x</sub> films and achieve better device performance.
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