IEEE Transactions on Plasma Science · 2019 · 39 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesImpedance MatchingPower AmplifiersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride Power AmplifiersHigh-electron-mobility TransistorsImpedance Matching NetworksImpedance Transformation RatioPower Amplifier DesignPower Amplifier Matching NetworksReturn Loss
In this article, a 1.7-2.6-GHz broadband power amplifier (PA) was proposed using the generalized quasi-Chebyshev lowpass matching approach, which was directly composed of step-impedance transmission lines (SITLs). First, the complete design theory for the introduced step-impedance matching network was provided with the detailed design equations. The impedance of the SITLs can be calculated directly based on the specified bandwidth, maximum allowable return loss, and impedance-transforming ratio. The electrical length of SITLs was utilized to adjust the harmonic impedances to perform a PA high-efficiency region. For demonstration, a PA using the 10-W gallium nitride high electron mobility transistor (GaN HEMT) with the measured drain efficiency (DE) of 65%-78% from 1.7 to 2.6 GHz was achieved. A good agreement between the simulated and measured results can be observed.
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Resistor-Transmission-Line Circuits
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