The HgCdTe Electron Avalanche Photodiode

Abstract

This paper reports results obtained on mid-wave, short-wave, and long-wave cutoff infrared Hg <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Cd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Te EAPDs that utilize a cylindrical "p-around-n", front side illuminated, n+/n-/p geometry that favors electron injection into the gain region. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, of zero