Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite

Abstract

Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In⁺/In³⁺) inorganic halide perovskite with the composition of Cs₂In(I)In(III)Cl₆ in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group <i>I</i>4/<i>m</i> with <i>a</i> = 17.2604(12) Å, <i>c</i> = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.