Publication | Closed Access
Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials
46
Citations
53
References
2019
Year
EngineeringEmerging Memory TechnologySolid-state ChemistryResistance Drift SuppressionPhase Change MemorySn ContentQuantum MaterialsMemory DeviceChemical UnderstandingMaterials SciencePhysicsCrystalline DefectsElectronic MemoryTetrahedral UnitsSolid-state PhysicElectronic MaterialsApplied PhysicsCondensed Matter PhysicsPeierls DistortionSemiconductor MemoryAmorphous Solid
The degree of Peierls distortion and the fraction of tetrahedral units in amorphous Ge–Sn–Te phase-change memory materials are gradually reduced as the Sn content gets richer.
| Year | Citations | |
|---|---|---|
Page 1
Page 1