1e:T4be,Multiband detection has always been a challenge and has drawn much attention in the development of photodetectors (PDs). Herein, we present controllable synthesis of SnO₂ wires with different sizes via chemical vapor deposition and formed composites with CsPbBr₃ particles to realize dual spectral response. We constructed PDs based on a single SnO₂ millimeter wire decorated with CsPbBr₃ particles (SnO₂ MMW/CsPbBr₃), which showed a stepped spectrum, fast response speed, and self-powered function. Meanwhile, SnO₂ microwires/CsPbBr₃ composites (SnO₂ MWs/CsPbBr₃) were also utilized to fabricate PDs. It is noteworthy that detection occurred in two different wavelength bands (320 and 520 nm) with equivalent intensity at a bias of 0 V. The self-powered feature of this device comes from the built-in electric field at the interface of SnO₂/CsPbBr₃, and the dual-color response originates from asymmetric junction barriers between conduction bands of SnO₂ and CsPbBr₃. This work demonstrated promising self-powered PDs that are capable of multiband detection.1f:T40d,Photodetectors (PDs) based on organic-inorganic hybrid materials such as graphene and perovskites have recently emerged at the forefront of the research in optoelectronic devices. Despite the remarkable progress in the performance of optoelectronic devices based on hybrid materials, some aspects such as stability have so far not been thoroughly addressed. This paper serves to demonstrate a fully inkjet-printed PD fabricated by hybrid perovskite (CH3NH3PbClx-3I3) layer between the two graphene electrodes as graphene/perovskite/graphene (GPG) heterostructure. The fully inkjet-printed GPG PD is found to be effective for the visible light region, which can be attributed by the high uniformity and low defects of the printed materials. Thus, the GPG PD achieves a high responsivity of 0.53 A/W. Fully inkjet-printed hybrid perovskite PD demonstrated in this paper unveils the facile, potentially large-scale and cost-effective methods for fabrication of hybrid perovskites-based optoelectronic devices, including PDs and solar cells.20:T58c,

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