Publication | Closed Access
Synthesis of large-area 2D WS<sub>2</sub> films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications
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Citations
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References
2019
Year
PhotonicsElectrical EngineeringElectronic DevicesEngineeringPhotoluminescencePhotodetectorsHigh-performance Self-powered UltravioletOptoelectronic MaterialsApplied PhysicsSelf-powered Ultraviolet PhotodetectionAluminum Gallium NitrideImaging ApplicationsPhotoelectric MeasurementOptoelectronic DevicesLarge-area 2DMultilayer HeterostructuresOptoelectronicsSemiconductor Nanostructures
High-performance self-powered ultraviolet (UV) photodetector based on a WS<sub>2</sub>/GaN heterojunction was demonstrated, which exhibits excellent UV photoresponse properties. Significantly, this photodetector has exhibited excellent UV imaging capability.
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