Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates - Concepedia

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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates

41

Citations

14

References

2019

Year

Xinke Liu, Haoyu Wang, Hsien‐Chin Chiu, Yuxuan Chen, Dabing Li, Chong-Rong Huang, Hsuan‐Ling Kao, Hao‐Chung Kuo, Sung-Wen Huang Chen

Journal of Alloys and Compounds

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceFree-standing Gan SubstratesBack-barrier Effect

References

	Year	Citations

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