22nm Fully-Depleted SOI High Frequency Noise Modeling up to 90GHz Enabling Ultra Low Noise Millimetre-Wave LNA Design

Abstract

This paper reports the high frequency (HF) noise characterized performance and modeling on 22nm FD-SOI technology transistor (GLOBALFOUNDRIES’ 22FDX <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> technology) from 2 GHz to the maximum E-band millimetre-Wave (mmWave) frequency of 90 GHz. The measurement was performed using the Focus Microwaves noise system with different customised setups and optimised for each discrete frequency bands. The data measured from each frequency bands were subsequently combined to produce the noise spectrum covering from 2 GHz to 90 GHz, with high accuracy, good continuity and excellent correlation to the compact model. The 22FDX <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> technology transistor demonstrated very low mmWave noise figure, which is favourable for RF and mmWave applications such as LNA.