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Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator

Recess DepthsElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsHfo2 Gate InsulatorDifferent Recess DepthsAluminum Gallium NitrideGan Power DeviceMicroelectronicsOptoelectronicsSemiconductor Device