A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS

Abstract

A 112 GS/s 1-to-4 ADC front-end in IHP 130 nm SiGe BiCMOS based on charge sampling is presented. In experimental tests, the ADC front-end achieves more than 35 dBc SFDR and more than 28 dB SNDR up to 43 GHz. Furthermore, sampling of 100 Gbaud (=200 Gb/s) PAM-4 signals with an EVM of 11.3% for 400k received symbols is demonstrated.