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Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringRoom Temperature BondingNanoelectronicsNanotechnologyApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorMo/au Nano-layerDiamond Wafers