A Compact, High-Power, 60 GHz SPDT Switch Using Shunt-Series SiGe PIN Diodes

Abstract

This work describes the design of a compact, 60 GHz, SPDT switch implemented using PIN diodes in a 130 nm SiGe BiCMOS technology. The SPDT RF switch employs a novel shunt-series topology with a resistive biasing scheme to "self-reverse-bias" the off-state shunt diode, thereby improving power handling capability of the SPDT. A coupled inductor matching network is used to minimize the switch size. The proposed design achieves a minimum insertion loss of 2.0 dB, more than 26 dB of isolation, and input-referred P1dB (at 60 GHz) of 22 dBm, with a 0.20 × 0.33 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> footprint.