Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Abstract

Abstract Composite films consisting of fluorinated graphene flakes with vanadium oxide (V 2 O 5 ) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat‐treatment conditions of the films (or on the hydration degree of V 2 O 5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 10 6 –10 9 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 10 3 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign‐alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.