A hybrid Si IGBT and SiC MOSFET module development

Abstract

A compact wirebond packaged phase-leg SiC/Si hybrid module was designed, developed, and tested. Details of the layout and gate drive designs are described. The IC chip for gate drive is carefully selected and compared. Dual pulse test confirmed that, the switching loss of hybrid module is close to pure SiC MOSFET module, and it is much less than pure Si IGBT device. The cost of hybrid module is closer to Si IGBT.