Microwave Energy Drives “On–Off–On” Spin‐Switch Behavior in Nitrogen‐Doped Graphene

Abstract

The established application of graphene in organic/inorganic spin-valve spintronic assemblies is as a spin-transport channel for spin-polarized electrons injected from ferromagnetic substrates. To generate and control spin injection without such substrates, the graphene backbone must be imprinted with spin-polarized states and itinerant-like spins. Computations suggest that such states should emerge in graphene derivatives incorporating pyridinic nitrogen. The synthesis and electronic properties of nitrogen-doped graphene (N content: 9.8%), featuring both localized spin centers and spin-containing sites with itinerant electron properties, are reported. This material exhibits spin-switch behavior (on-off-on) controlled by microwave irradiation at X-band frequency. This phenomenon may enable the creation of novel types of switches, filters, and spintronic devices using sp² -only 2D systems.