High performance anatase-TiO₂ thin film transistors with a two-step oxidized TiO₂ channel and plasma enhanced atomic layer-deposited ZrO₂ gate dielectric

Abstract

We reported high performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel (O2 annealing and N2O plasma treatment) and O2 plasma enhanced atomic layer-deposited ZrO2 gate dielectric. The transistors using 60 nm TiO2 as the active channel exhibited a steep subthreshold swing of 112 mV dec−1 and a high on/off current ratio of 1.4 × 108. The superior performances, achieved by the two-step oxidizing process and the utilization of ZrO2 as the high-k gate dielectric, show their great potential to be applied in future electronic and optical systems, such as active-matrix displays and ultraviolet sensors.