Scientific Reports · 2018 · 250 citations · 27 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectromagnetismMagnetic MaterialsAntiferromagnetismMagnetic OxidesMagnetic Properties Of SolidsMagnetic SusceptibilityMagnetism In SolidsSpintronicsAntiferromagnetic OxidesAntiferromagnetic SpintronicsMagnetoresistanceSpin Hall EffectTorque
Antiferromagnets have been difficult to control and detect because they require strong magnetic fields and have negligible net magnetic moments, limiting their progress compared to ferromagnets. The study demonstrates that spin torque can control the magnetic moments in NiO using a relatively small electric current density (~4 × 10⁷ A cm⁻²). The orientation of these moments is detected via transverse resistance arising from spin Hall magnetoresistance. The techniques for controlling and detecting antiferromagnetic moments in NiO enable spin‑torque antiferromagnetic memory and advance antiferromagnetic spintronics.
For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in modern spintronic devices. Here we show that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density (~4 × 107 A/cm2) and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance. The demonstrated techniques of controlling and detecting antiferromagnets would outstandingly promote the methodologies in the recently emerged "antiferromagnetic spintronics". Furthermore, our results essentially lead to a spin torque antiferromagnetic memory.
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Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
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