Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS₂ by Dielectric and Carrier Screening

Abstract

By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.