Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS₂ by Dielectric and Carrier Screening

Abstract

By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm2 V−1 s−1 and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.