Ultra-narrow linewidth laser based on a semiconductor gain chip and extended Si₃N₄ Bragg grating

Abstract

We demonstrate ultra-narrow linewidth fixed wavelength hybrid lasers composing a semiconductor gain chip and extended silicon nitride Bragg grating. Fabricated ultra-low κ Bragg gratings provide a narrow bandwidth and high side-lobe suppression ratio. A single-wavelength 1544 nm hybrid extended-distributed Bragg reflector laser with 24 mW output power and a Lorentzian linewidth of 320 Hz is demonstrated, providing a high-performance light source for on- and off-chip applications.