The Journal of Physical Chemistry Letters · 2019 · 34 citations · 37 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPerovskite MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesBand AlignmentEpitaxial Film GrowthExcitonsHeterojunctionsHigh-vacuum DepositionOptoelectronic PropertiesSemiconductor HeterojunctionsVan Der Waals Epitaxy
interface, indicating an effective type II band alignment, which can be further confirmed by ultraviolet photoemission spectroscopy measurements. The results provide a new material platform for the application of the vdW heterojunctions in electronic and optoelectronic devices.
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Boron nitride substrates for high-quality graphene electronics
Cory R. Dean, Andrea F. Young, Inanc Meric et al. · Nature Nanotechnology · 2010 · 7K citations · Full text
Natural Sciences, Materials Engineering, Materials Science +9
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
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