Layered deposition of SnS₂ grown by atomic layer deposition and its transport properties

Abstract

In this work, we report on the layered deposition of few-layer tin disulfide (SnS₂) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS₂ with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS₂ film (3-6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS₂ as the transport channel. SnS₂ devices showed typical n-type characteristic with on/off current ratio of ∼8.32 × 10⁶, threshold voltage of ∼2 V, and a subthreshold swing value of 830 mV decade^-1 for the 6 layers SnS₂. The developed SnS₂ ALD technique may aid the realization of two-dimensional SnS₂ based flexible and wearable devices.